| 摘要 |
A cascaded charge pump based power supply for use with low voltage dynamic random access memory (DRAM) includes a charge pump and a non-overlapping clock signal generator. The charge pump circuit has two pump cascades coupled in parallel. Each pump cascade includes a plurality of pump stages connected serially between a power supply voltage and an output supply node. Adjacent stages of each cascade are clocked on opposite phases of the system clock signal. The charge pump drives an output supply node on both the rising and falling edge of the system clock signal. A non-overlapping clock signal generator for use with a charge pump has a charge sharing transistor which equalizes the non-overlapping output clock signals through charge sharing during the non-overlap period between subsequent phases of the system clock. The charge pump and capacitors are implemented using p-channel devices and the first stage of each cascade is constructed using thin-oxide devices. |
