发明名称 AQUEOUS ALKALI-SOLUBLE RESIN, PHOTOSENSITIVE RESIN COMPOSITION, PHOTOMASK AND METHOD OF MANUFACTURING ELECTRONIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a high precision and low defect photomask for KrF excimer laser lithography capable of being manufactured in a reduced number of processes. <P>SOLUTION: This photomask for the KrF excimer laser lithography is obtained by directly forming on a quartz glass substrate 10 a resist pattern 18 which absorbs a KrF excimer laser light (wavelength; about 248 nm) efficiently. The resist pattern 18 comprises a photosensitive resin mainly composed of a highly light-shielding, aqueous alkali-soluble resin to which a naphthol structure in which at least one hydroxyl group is bound to a naphthalene nucleus is incorporated or an aqueous alkali-soluble resin derivative is used as a polymeric resin matrix. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003201324(A) 申请公布日期 2003.07.18
申请号 JP20010400619 申请日期 2001.12.28
申请人 HITACHI LTD 发明人 SHIRAISHI HIROSHI;UTAKA SONOKO;HATTORI KOJI;ARAI TADASHI;SAKAMIZU TOSHIO
分类号 G03F7/023;C08G10/02;C08L61/14;G03F1/54;G03F1/56 主分类号 G03F7/023
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