发明名称 |
AQUEOUS ALKALI-SOLUBLE RESIN, PHOTOSENSITIVE RESIN COMPOSITION, PHOTOMASK AND METHOD OF MANUFACTURING ELECTRONIC DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high precision and low defect photomask for KrF excimer laser lithography capable of being manufactured in a reduced number of processes. <P>SOLUTION: This photomask for the KrF excimer laser lithography is obtained by directly forming on a quartz glass substrate 10 a resist pattern 18 which absorbs a KrF excimer laser light (wavelength; about 248 nm) efficiently. The resist pattern 18 comprises a photosensitive resin mainly composed of a highly light-shielding, aqueous alkali-soluble resin to which a naphthol structure in which at least one hydroxyl group is bound to a naphthalene nucleus is incorporated or an aqueous alkali-soluble resin derivative is used as a polymeric resin matrix. <P>COPYRIGHT: (C)2003,JPO |
申请公布号 |
JP2003201324(A) |
申请公布日期 |
2003.07.18 |
申请号 |
JP20010400619 |
申请日期 |
2001.12.28 |
申请人 |
HITACHI LTD |
发明人 |
SHIRAISHI HIROSHI;UTAKA SONOKO;HATTORI KOJI;ARAI TADASHI;SAKAMIZU TOSHIO |
分类号 |
G03F7/023;C08G10/02;C08L61/14;G03F1/54;G03F1/56 |
主分类号 |
G03F7/023 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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