| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and a device for evaluating an SOI substrate and a method for manufacturing a semiconductor device, with which whether a crystal defect is generated in a supporting substrate or a semiconductor layer thereon is evaluated, and which region the crystal defect is generated in a laminated SOI substrate is confirmed. <P>SOLUTION: An X-ray beam is made incident at specified angles on a region (a point of measurement 2) where the supporting substrate 1 of a surface of the SOI substrate and a crystal layer 2 overlap with each other, to acquire an X-ray diffraction intensity distribution based on a locking curve, etc. An incident angle with high diffraction intensity is detected. An incident angleθ1 orθ2, that indicates the diffraction intensity of one of the supporting substrate and the crystal layer, is selected. The selected incident angleθ1 orθ2 and at least one angle between an in-plane rotationαand a gate angleβof the SOI substrate, or only the incident angle is adjusted, to detect the maximum intensity of the diffraction intensity. The SOI substrate is inclined at the angle indicating the maximum intensity. Only the supporting substrate or the crystal layer, indicating the diffraction intensity in the selected incident angleθ1 orθ2, is subjected to selective X-ray topography-photographing. <P>COPYRIGHT: (C)2003,JPO</p> |
