发明名称 DIGITAL DELAY LINE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a digital delay line in which jitter characteristics are improved and the area for the delay line can be reduced by one-half in comparison to the existing digital delay line. <P>SOLUTION: The digital delay line is provided with a first NAND gate ND200a to input a first clock signal clk and a first control signal Se1200, a second NAND gate ND200b to input the output signal of the first NAND gate ND200a and a signal Vcc of a high level, a first inverter IV199 to input a second control signal Sel199, a first NOR gate NR199a to input a second clock signal clkb having the phase difference of 180°from the first clock signal clk and the output signal of the first inverter INV199, and a second NOR gate NR199b to input the output signal of the second NAND gate ND200b and the output signal of the first NOR gate NR199b. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003204251(A) 申请公布日期 2003.07.18
申请号 JP20020275213 申请日期 2002.09.20
申请人 HYNIX SEMICONDUCTOR INC 发明人 RA KOSHIN
分类号 G06F1/10;G11C11/407;G11C11/4076;H03H11/26;H03K5/00;H03K5/13;H03K5/135;H03K5/156;H03L7/081;(IPC1-7):H03K5/135 主分类号 G06F1/10
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