发明名称 CPP STRUCTURE MAGNETORESISTIVE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a CPP structure magnetoresistive device which is composed of laminated layers small in number of layers but surely has a large resistance change. SOLUTION: A CPP structure magnetoresistive (MR) device is equipped with a spin bulb film 43. In the spin bulb film 43, a boundary surface BR is specified between conductive layers 55a and 55b composing a non-magnetic intermediate layer 55. A magnetic metal material 56 and an insulating material 57 are distributed along the boundary surface BR. A sense current path is constricted by the function of the insulating material 57. In the CPP structure magnetoresistance effect device, a large resistance change can be realized with the inversion of a direction of magnetization established in a free-side ferromagnetic layer 58. An enough level of voltage change can be detected by a small sense current. This CPP structure MR device can be conducive to an increase in density of magnetic records and a reduction in power consumption. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003204094(A) 申请公布日期 2003.07.18
申请号 JP20020003460 申请日期 2002.01.10
申请人 FUJITSU LTD 发明人 SEYAMA YOSHIHIKO;NAGASAKA KEIICHI;OSHIMA KOKEI;SHIMIZU YUTAKA;TANAKA ATSUSHI
分类号 G11B5/39;H01F10/32;H01L43/08;(IPC1-7):H01L43/08 主分类号 G11B5/39
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