| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus with low reflectance against light shifting only by constant wavelength range from a certain wavelength in an antireflective permeable film against a certain wavelength. SOLUTION: It comprises construction laminated in turn with n-InP clad layer 2, GRIN-SCH-MQW active layer 3, p-InP clad layer 4, p-InGaAsP contact layer 5, and p-side electrode 6 on an n-InP substrate 1. It also laminates high reflective film 8 on a reflective side end surface 16, and laminates a permeable film 9 on an emitting side end surface 15. The permeable film 9 provides a first film 10 and a second film 11, and the second film 11 consists of equivalent films comprised of three layers; that is, a second-a film 12, a second-b film 13, and a second-c film 14. By such construction, it realizes low reflectance against light shifting in the constant wavelength range, and provides the semiconductor laser apparatus provided with the permeable film capable of restraining in low reflectance occurred by laminated error. COPYRIGHT: (C)2003,JPO
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