| 摘要 |
PROBLEM TO BE SOLVED: To realize increase in speed and in resistance to voltage at the same time or, specifically, to provide a high-performance heterojunction field-effect transistor by a method, wherein the band gap energy and the heteroconstruction of a material employed for a spacer layer and a channel layer are optimized, in the heterojunction field-effect transistor which plays an important role in communication technology. SOLUTION: A band structure is optimized by introducing AlAsSb or AlPSb or the like into the spacer layer in the heterojunction field-effect transistor, and further, InGaAsP or InGaAsPN or the like are introduced into the channel layer in the heterojunction field-effect transistor. According to this method, since a two-dimensional electron gas, having mobility and carrier concentration which are higher than those of a conventional gas is realized, the transistor operates at a higher speed than the conventional gas, and the gas is provided with a structure quickly discharging generated hole, while restraining ionization due to ionization collisions thereby permitting increase in resistance to voltage. COPYRIGHT: (C)2003,JPO
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