发明名称 |
INTEGRATED PASSIVE DEVICES FORMED BY DEMASCENE PROCESSING |
摘要 |
<p>A passive transmission line element "device" monolithically integrated into an integrated circuit at one or more levels of the integrated circuit by using a damascene process to delineate a conductive line (30) such that at least the bottom surface and sidewalls of the conductive line are embedded in an enhancement layer (26) having high permeability and/or high permitivity. Optionally a second enhancement layer (34) may cover the conductive line, to completely embed or surround the conductive line with permeability and/or permitivity enhancement material. The passive transmission line device comprising the conductive line and the enhancement layer thus has enhanced distributed inductance and/or enhanced distributed capacitance. In addition, the passive transmission line device may optionally have enhanced distributed resistance as well by forming the conductive line from resistive "i.e., not highly conductive" material.</p> |
申请公布号 |
WO03058715(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
WO2002US37951 |
申请日期 |
2002.11.25 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
VAN BUSKIRK, PETER, C. |
分类号 |
H01L21/02;H01L21/768;H01L23/522;H01L23/532;H01L27/08;H01L27/22;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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