发明名称 TESTING CURRENT PERPENDICULAR TO PLANE GIANT MAGNETORESISTANCE MULTILAYER DEVICES
摘要 A wafer (12) suitable to be tested for current-perpendicular to the plane resistance includes a substrate (22), a conductive base layer (24) on the substrate, a magnetic multilayer (26, 27) on the conductive base layer, and a top conductive layer (30). A testing ring (16) is formed on the magnetic multilayer (27) in a manner whereby it is separated from rest of the magnetic multilayer by a trench (42) in the magnetic multilayer (27). Within the testing ring (16), the magnetic multilayer includes a hole (40). The current perpendicular to the plane resistance of the wafer (12) may be determined by passing a predetemined current perpendicular through the testing ring (16) by contacting a probe (66) to the testing ring and measuring the voltage at the conductive base layer (24). The probe (66) used in the present invention may be an AFM or a STM probe (66).
申请公布号 WO03050552(B1) 申请公布日期 2003.07.17
申请号 WO2002US36262 申请日期 2002.11.13
申请人 THE GOVERNMENT OF THE UNITED STATES OF AMERICA, ASREPRESENTED BY THE SECRETARY OF THE NAVY 发明人 PRINZ, GARY, A.;BUSSMAN, KONRAD
分类号 G11C29/00;(IPC1-7):G01R31/00 主分类号 G11C29/00
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