发明名称 |
TESTING CURRENT PERPENDICULAR TO PLANE GIANT MAGNETORESISTANCE MULTILAYER DEVICES |
摘要 |
A wafer (12) suitable to be tested for current-perpendicular to the plane resistance includes a substrate (22), a conductive base layer (24) on the substrate, a magnetic multilayer (26, 27) on the conductive base layer, and a top conductive layer (30). A testing ring (16) is formed on the magnetic multilayer (27) in a manner whereby it is separated from rest of the magnetic multilayer by a trench (42) in the magnetic multilayer (27). Within the testing ring (16), the magnetic multilayer includes a hole (40). The current perpendicular to the plane resistance of the wafer (12) may be determined by passing a predetemined current perpendicular through the testing ring (16) by contacting a probe (66) to the testing ring and measuring the voltage at the conductive base layer (24). The probe (66) used in the present invention may be an AFM or a STM probe (66).
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申请公布号 |
WO03050552(B1) |
申请公布日期 |
2003.07.17 |
申请号 |
WO2002US36262 |
申请日期 |
2002.11.13 |
申请人 |
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, ASREPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
PRINZ, GARY, A.;BUSSMAN, KONRAD |
分类号 |
G11C29/00;(IPC1-7):G01R31/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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