| 摘要 |
An infrared radiation detecting device is constructed using a manufacturing method to increase the infrared radiation absorptance of the infrared radiation absorbing film. The infrared radiation detecting device has an infrared radiation absorbing film. In one embodiment, the infrared radiation absorbing film has a varying film thickness. The film thickness difference between the thickest points and the thinnest points and the spacing between the thickest points within the same plane are set to decrease the effective surface reflectance cause by the interference or scattering effects of the infrared radiation. Preferably, the film thickness differences between the thickest points and the thinnest points are equal to or greater than ¼ of the wavelength of the infrared radiation being measured, and the spacing between the thickest points within the same plane is shorter than the wavelength of the infrared radiation being measured.
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