发明名称 |
Very large-scale integrated circuit device has tetraethyl orthosilicate oxide film that is provided between low-constant dielectric layer and nitrogen base layer |
摘要 |
The tetraethyl orthosilicate (TEOS) films (12,24,36,48) are provided directly between the low-constant dielectric layers (18,42) and nitrogen base layers (6,30,54), so as to prevent the diffusing of N-H bases from the nitrogen base layer to low-constant dielectric layers. The low-constant dielectric layers comprise organo-silicate glass on SIOC-H. The N-H base groups comprise amines or amino silicates. An Independent claim is also included for very large-scale integrated circuit device manufacturing method.
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申请公布号 |
DE10300331(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
DE2003100331 |
申请日期 |
2003.01.02 |
申请人 |
AGERE SYSTEMS, INC. |
发明人 |
STEINER, KURT G.;VITKAVAGE, SUSAN;LYTLE, STEVE;GIBSON, GERALD;JESSEN, SCOTT |
分类号 |
H01L23/522;H01L21/027;H01L21/312;H01L21/314;H01L21/316;H01L21/318;H01L21/768;H01L23/532;(IPC1-7):H01L21/31 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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