发明名称 |
Electronic device and electronic apparatus |
摘要 |
An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
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申请公布号 |
US2003132900(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20030337391 |
申请日期 |
2003.01.07 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAUCHI YUKIO;FUKUNAGA TAKESHI |
分类号 |
H01L21/336;H01L21/77;H01L27/12;H01L27/13;H01L27/32;H01L29/786;(IPC1-7):G09G3/30 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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