| 摘要 |
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. The compliant substrate includes an accommodating buffer layer (235) that is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (234) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (235). The accommodating buffer layer (235) is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer (235) and the underlying silicon substrate (222) is taken care of by the amorphous interface layer (234). The use of monocrystalline dielectric material as a layer facilitates the fabrication of on chip high frequency communications devices such as dielectric resonators with direct interface to compound semiconductor material in the integrated circuit. |
