发明名称 FULL RAIL DRIVE ENHANCEMENT TO DIFFERENTIAL SEU HARDENING CIRCUIT
摘要 <p>A hardening circuit is provided for an integrated circuit which includes a data state reinforcing feedback path having a data node Q and a data complement node QN. A first hardening transistor is coupled between a rail and the data node Q, and a second hardening transistor coupled between the rail and the data complement node QN. The first and second hardening transistors provide additional drive to the data node Q and the data complement node QN. Gate controls operate the first and second hardening transistors and provide full rail drive to SEU sensitive nodes.</p>
申请公布号 WO2003058628(A1) 申请公布日期 2003.07.17
申请号 US2002038301 申请日期 2002.12.03
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