| 摘要 |
Numerous methods for forming various semiconductor structures are disclosed. In one embodiment, a layered dielectric structure of alternating sub-layers (110) of a first dielectric material (110a) and a second dielectric material (110b)is formed on a suitable semiconductor substrate (102). In this embodiment, the layered dielectric structure (110) comprises an alternating pattern of at least two sub-layers of a first dielectric material (110a, 110c) which is a high-K dielectric material and at least one layer of a second dielectric material (110b) which is a standard-K dielectric material, wherein at least one of the one or more second dielectric material sub-layers (110b) contain nitrogen implanted therein using a nitridation step. In another embodiment, a layered dielectric structure of alternating sub-layers (110) of a first dielectric material (110a) and a second dielectric material (110b)is formed on a suitable semiconductor substrate (102. In this embodiment, the layered dielectric structure (110) comprises an alternating pattern of at least two sub-layers of a first dielectric material (110a, 110c) which is a standard-K dielectric material and at two layers of a second dielectric material (110b, 110d) which is a high-K dielectric material, wherein at least one of the one or more first dielectric material sub-layers (110a, 110c) contain nitrogen implanted therein using a nitridation step. In this embodiment, the first sub-layer (110a) (the one formed on the semiconductor substrate) in the layered dielectric structure is a standard-K material layer. In both embodiments the layered dielectric structure (110) is annealed at elevated temperature to from a composite dielectric layer (110rp) about the boundary of each first dielectric material/second dielectric material layer.
|
