发明名称 Thin film magnetic memory device having redundancy repair function
摘要 Each of program units which is arranged to be adjacent to a memory array, stores redundant information of 1 bit necessary for replacement and repair. Prior to normal data read operation, the redundant information read from the program units is latched in a row select circuit. The row select circuit selectively activates one of word lines corresponding to the normal memory cells and a spare word line in accordance with whether the defective row addresses indicated by the redundant information are matched to an inputted row addresses, respectively.
申请公布号 US2003133334(A1) 申请公布日期 2003.07.17
申请号 US20020194256 申请日期 2002.07.15
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OHTANI JUN
分类号 G11C11/14;G11C11/15;G11C29/00;G11C29/04;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C7/00 主分类号 G11C11/14
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