| 摘要 |
<p>A passive transmission line element “device” monolithically integrated into an integrated circuit at one or more levels of the integrated circuit by using a damascene process to delineate a conductive line (30) such that at least the bottom surface and sidewalls of the conductive line are embedded in an enhancement layer (26) having high permeability and/or high permitivity. Optionally a second enhancement layer (34) may cover the conductive line, to completely embed or surround the conductive line with permeability and/or permitivity enhancement material. The passive transmission line device comprising the conductive line and the enhancement layer thus has enhanced distributed inductance and/or enhanced distributed capacitance. In addition, the passive transmission line device may optionally have enhanced distributed resistance as well by forming the conductive line from resistive “i.e., not highly conductive” material.</p> |
