发明名称 |
Vapor growth method, semiconductor producing method, and production method for semiconductor device |
摘要 |
In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer. Thus, there can be obtained a semiconductor layer in which a misfit dislocation can be improved.
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申请公布号 |
US2003134491(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20020204386 |
申请日期 |
2002.12.02 |
申请人 |
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发明人 |
YAMAGATA HIDEO;KOUMOTO TAKEYOSHI;ATSUUMI KENJI;NEGORO YOICHI;HIRATA TATSUHIRO;NOGUCHI TAKASHI |
分类号 |
C30B25/02;H01L21/20;H01L21/205;H01L21/331;(IPC1-7):C30B1/00 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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