发明名称 Semiconductor calibration wafer with no charge effect
摘要 A semiconductor calibration wafer that has no charge effect is disclosed. The calibration wafer has a substrate layer and a conductive metal layer. The conductive metal layer completely covers the substrate layer, and has a critical dimension (CD) bar corresponding to a desired CD. The substrate layer may be an oxide layer or another type of substrate layer, whereas the conductive metal layer may be an aluminum layer, a copper layer, or another type of conductive metal layer. Where the calibration wafer is used in conjunction with a scanning electron microscope (SEM) to monitor the CD, the electrons ejected by the SEM do not remain on the semiconductor calibration wafer, but instead are carried away via the conductive metal layer. The calibration wafer is thus not vulnerable to the charge effect.
申请公布号 US2003132374(A1) 申请公布日期 2003.07.17
申请号 US20020046806 申请日期 2002.01.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 WANG CHI-YAO;YEN MING-SHUO
分类号 G01Q30/02;H01J37/28;H01L23/544;(IPC1-7):G12B13/00;G01D18/00 主分类号 G01Q30/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利