发明名称 |
Damascene method employing multi-layer etch stop layer |
摘要 |
Within a damascene method for forming a microelectronic fabrication, there is employed an etch stop layer comprising a comparatively low dielectric constant dielectric material sub-layer having formed thereupon a comparatively high dielectric constant dielectric material sub-layer. Within the method there is also simultaneously etched: (1) an anti-reflective coating layer from an inter-metal dielectric layer; and (2) the etch stop layer from a contact region. The microelectronic fabrication is formed with enhanced performance and enhanced reliability.
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申请公布号 |
US2003134521(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20020044599 |
申请日期 |
2002.01.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
GUO CHENG-CHENG;CHEN DIAN-HAU;TURN LI-KONG;SHENG HAN-MING |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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