EMBEDDED ATTENUATED PHASE SHIFT MASK AND METHOD OF MAKING EMBEDDED ATTENUATED PHASE SHIFT MASK
摘要
An embedded attenuated phase shift mask ("EAPSM") includes an etch stop layer that can be plasma etched in a process that is highly selective to the underlying quartz substrate. Selectivity to the underlying quartz maintains a desired 180 degree phase shift uniformly across the active mask area. Conventional plasma etching techniques can be utilized without damage to the underlying quartz substrate. Alternatively, the etch stop layer comprises a transparent material that can remain intact ion the mask structure.
申请公布号
WO0244812(A3)
申请公布日期
2003.07.17
申请号
WO2001US44814
申请日期
2001.11.30
申请人
UNAXIS USA INC.;WESTERMAN, RUSSELL;CONSTANTINE, CHRISTOPHER