发明名称 Semiconductor memory device with fast masking process in burst write mode
摘要 A semiconductor memory device has a burst write mode in which predetermined plural command signals are input through a plurality of command pads and a mask control operation in the burst write mode is performed in response to the command signals. Therefore, the mask control in burst write mode is increased in speed to give an improved data transfer rate.
申请公布号 US2003135707(A1) 申请公布日期 2003.07.17
申请号 US20020327096 申请日期 2002.12.24
申请人 FUJITSU LIMITED 发明人 IKEDA HITOSHI;SATO YASUHARU;SUZUKI TAKAAKI;UCHIDA TOSHIYA;SATO KOTOKU
分类号 G11C11/407;G11C7/10;G11C7/22;G11C11/401;(IPC1-7):G06F9/26 主分类号 G11C11/407
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