| 摘要 |
An optimum layer structure for a piezoelectric actuator is provided, in which strontium ruthenate oriented in (100) plane is used as a bottom electrode. The piezoelectric actuator comprises an Si substrate 20, a diaphragm 30 formed on the Si substrate 20 and comprising SiO2 or ZrO2, a buffer layer 32 formed on this diaphragm and comprising (100) orientation or (110) orientation SrO, a bottom electrode 42 formed on the buffer layer and comprising (100) orientation strontium ruthenate having a perovskite structure, a piezoelectric layer 43 formed on the bottom electrode and comprising (100) orientation PZT, and a top electrode 44 formed on the piezoelectric layer. |
