| 摘要 |
The present invention provides a method for depositing a metal film capable of suppressing oxygen from remaining within the metal film and preventing clustering of the metal film due to a low temperature deposition by employing a chemical vapor deposition process and a method for depositing a Ru film using the CVD process. The present invention provides a method for depositing a metal film by using a chemical vapor deposition process, including the steps of: loading a substrate to a reactor where a metal film will be deposited; heating the substrate to densify the metal film as simultaneous to a deposition of the metal film; and depositing the metal film on the substrate by adding a precursor of the metal film and a reaction gas having a reducing ability to the heated substrate.
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