ASYMMETRIC SEMICONDUCTOR DEVICE HAVING DUAL WORK FUNCTION GATE AND METHOD OF FABRICATION

摘要

An asymmetric semiconductor device (10, 12) and a method of making a pair of the asymmetric devices. The semiconductor device includes a layer of semiconductor material (16) having a source (20) and a drain (22), and a dual work function gate (30) disposed on the layer of semiconductor material to define a channel (32) interposed between the source and the drain.