发明名称 |
Pattern for monitoring epitaxial layer washout |
摘要 |
A pattern for monitoring epitaxial layer washout is disclosed. The pattern includes first and second sub-patterns. The first sub-pattern has a shape and defines one or more minimum dimensions. Obfuscation of the first sub-pattern means that epitaxial washout has occurred at least for dimensions equal to or less than the minimum dimensions. The second sub-pattern has the same shape of the first sub-pattern, but defines one or more maximum dimensions. Obfuscation of the second sub-pattern means that epitaxial washout has occurred for dimensions equal to or less than the maximum dimensions. The sub-patterns can include a pair of separated features, such as a pair of interlocking but separated L-shaped features, the separation of which defines the dimensions of the sub-patterns.
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申请公布号 |
US2003131785(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20020047379 |
申请日期 |
2002.01.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUANG SHIH-FENG;HUANG CHIH-FENG;HUANG KUO-SU |
分类号 |
C30B33/00;H01L21/20;H01L23/544;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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