| 摘要 |
<p>A power semiconductor device includes a substrate (502) of a first conductivity type and then a voltage sustaining region disposed on the substrate. The voltage sustaining region includes an epitaxial layer (501) having a first conductivity type and at least one trench (520) located in the epitaxial layer. At least one doped column (540) having a dopant of a second conductivity type is located in the epitaxial layer, adjacent a sidewall of the trench. The column is formed from a plurality of doped layers (528, 530, 532, 534) that are arranged vertically one over the other and which are diffused into one another. A filler material is also provided, which substantially fills the trench. At least one region of the second conductivity is disposed over the voltage sustaining region to define a junction therebetween.</p> |
