发明名称 |
Method for monitoring the rate of etching of a semiconductor |
摘要 |
A method of measuring the rate of etching of trenches on a substrate using interferometry is provided. The method comprises transmitting onto the substrate incident electromagnetic radiation having a wavelength above the wavelength at which the trenches act as waveguides for the radiation; collecting reflected electromagnetic radiation from the substrate; detecting a repetitive pattern of maximum intensities and minimum intensities of the reflected electromagnetic radiation during the etching; and determining the rate of etching based upon the wavelength of the incident electromagnetic radiation and the time period of the pattern.
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申请公布号 |
US2003133127(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20020050737 |
申请日期 |
2002.01.16 |
申请人 |
ZAIDI SHOAIB HASAN;MATHAD GANGADHARA S. |
发明人 |
ZAIDI SHOAIB HASAN;MATHAD GANGADHARA S. |
分类号 |
G01B11/06;(IPC1-7):G01B11/02 |
主分类号 |
G01B11/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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