发明名称 Manufacturing method of semiconductor device
摘要 A manufacturing method of a semiconductor device for providing wires on a front surface of a semiconductor wafer by providing a plating layer, in which conductive layers provided on the front and back surfaces of the semiconductor wafer are electrically conducted by solder filled in its through-holes, and electrolytic plating is carried out by electrically connecting cathode terminals of an electrolytic plating apparatus and the conductive layer provided on the back surface of the semiconductor wafer which is provided with a mask on the conductive layer provided on its front surface.
申请公布号 US2003134509(A1) 申请公布日期 2003.07.17
申请号 US20020242422 申请日期 2002.09.13
申请人 IWAZAKI YOSHIHIDE;SUMINOE SHINJI;NAKANISHI HIROYUKI;ISHIO TOSHIYA;TANAKA TAKAMASA;MORI KATSUNOBU 发明人 IWAZAKI YOSHIHIDE;SUMINOE SHINJI;NAKANISHI HIROYUKI;ISHIO TOSHIYA;TANAKA TAKAMASA;MORI KATSUNOBU
分类号 C25D5/02;C25D5/08;C25D7/12;C25D17/00;C25D17/06;C25D17/08;C25D17/10;C25D17/12;H01L21/288;H01L21/302;H01L21/3205;H01L21/768;(IPC1-7):H01L21/44 主分类号 C25D5/02
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