发明名称 |
Manufacturing method of semiconductor device |
摘要 |
A manufacturing method of a semiconductor device for providing wires on a front surface of a semiconductor wafer by providing a plating layer, in which conductive layers provided on the front and back surfaces of the semiconductor wafer are electrically conducted by solder filled in its through-holes, and electrolytic plating is carried out by electrically connecting cathode terminals of an electrolytic plating apparatus and the conductive layer provided on the back surface of the semiconductor wafer which is provided with a mask on the conductive layer provided on its front surface.
|
申请公布号 |
US2003134509(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20020242422 |
申请日期 |
2002.09.13 |
申请人 |
IWAZAKI YOSHIHIDE;SUMINOE SHINJI;NAKANISHI HIROYUKI;ISHIO TOSHIYA;TANAKA TAKAMASA;MORI KATSUNOBU |
发明人 |
IWAZAKI YOSHIHIDE;SUMINOE SHINJI;NAKANISHI HIROYUKI;ISHIO TOSHIYA;TANAKA TAKAMASA;MORI KATSUNOBU |
分类号 |
C25D5/02;C25D5/08;C25D7/12;C25D17/00;C25D17/06;C25D17/08;C25D17/10;C25D17/12;H01L21/288;H01L21/302;H01L21/3205;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
C25D5/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|