发明名称 Process for producing titanium material for target, titanium material for target, and sputtering target using the same
摘要 A titanium material for a target has a microstructure in which the grain size is small and uniform and also has a macrostructure of the surface of the titanium material which is non-patterned and is excellent in surface property. A titanium ingot in which Vacuum Arc Remelting or Electron Beam Melting is performed is roughly forged at a temperature from 700° C. up to the beta transformation temperature, and is then forged for finishing at room temperature to 350° C., and is finally annealed.
申请公布号 US2003132108(A1) 申请公布日期 2003.07.17
申请号 US20030341558 申请日期 2003.01.14
申请人 TAKAHASHI SHOICHI;IWABUCHI TAKAO;USHIJIMA KENSUKE 发明人 TAKAHASHI SHOICHI;IWABUCHI TAKAO;USHIJIMA KENSUKE
分类号 C22F1/00;C22F1/18;C23C14/34;(IPC1-7):C23C14/34;C25B9/00 主分类号 C22F1/00
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