发明名称 |
Process for producing titanium material for target, titanium material for target, and sputtering target using the same |
摘要 |
A titanium material for a target has a microstructure in which the grain size is small and uniform and also has a macrostructure of the surface of the titanium material which is non-patterned and is excellent in surface property. A titanium ingot in which Vacuum Arc Remelting or Electron Beam Melting is performed is roughly forged at a temperature from 700° C. up to the beta transformation temperature, and is then forged for finishing at room temperature to 350° C., and is finally annealed.
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申请公布号 |
US2003132108(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20030341558 |
申请日期 |
2003.01.14 |
申请人 |
TAKAHASHI SHOICHI;IWABUCHI TAKAO;USHIJIMA KENSUKE |
发明人 |
TAKAHASHI SHOICHI;IWABUCHI TAKAO;USHIJIMA KENSUKE |
分类号 |
C22F1/00;C22F1/18;C23C14/34;(IPC1-7):C23C14/34;C25B9/00 |
主分类号 |
C22F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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