发明名称 |
TiW platinum interconnect and method of making the same |
摘要 |
A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etching the platinum in argon, followed by a wet etch in aqua regia using an oxide hardmask. Alternatively, the titanium-tungsten and platinum layers are deposited sequentially and patterned by a single plasma etch process with a photoresist mask.
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申请公布号 |
US2003132522(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20020044009 |
申请日期 |
2002.01.11 |
申请人 |
ALIE SUSAN A.;WACHTMANN BRUCE K.;KNEEDLER DAVID S.;LIMB SCOTT;NUNAN KIERAN |
发明人 |
ALIE SUSAN A.;WACHTMANN BRUCE K.;KNEEDLER DAVID S.;LIMB SCOTT;NUNAN KIERAN |
分类号 |
B81B7/00;(IPC1-7):H01L23/48 |
主分类号 |
B81B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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