PHOTO DIODE DETECTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A photo diode detector and a fabricating method thereof are provided to restrain leakage current, and to obtain the desired capacitance by forming thickly a BCB material having a low dielectric constant on an upper portion of an SiNx insulating layer. CONSTITUTION: A u-InO.53GaO.47As layer(22) is grown on an InP substrate(21). A u-Inp layer(23) is formed on the u-InO.53GaO.47As layer. An SiNx insulating layer(25) is formed on the u-Inp layer. An additional insulating layer(26) is formed on the SiNx insulating layer. An opening is formed on a predetermined portion of the additional insulating layer and the SiNx insulating layer. A P-InP layer(24) is formed at the u-Inp layer under the opening. A P-metal layer(28) is formed at an upper portion of the additional insulating layer. An N-metal layer(29) and a non-reflective layer are formed at a lower portion of the InP substrate.