| 摘要 |
A semiconductor light emitting device is disclosed, which comprises a substrate (10, 50, 70, 90), and multi-layer semiconductor film (11-17, 51-57, 71-77, 91-97) formed on the substrate (10, 50, 70, 90), the multi-layer semiconductor film (11-17) including a plurality of semiconductor layers (11-17) overlaid on the substrate (10), the semiconductor layers (11-17) having a light emission layer for emitting a light, wherein the light is picked up at a first side of the multi-layer semiconductor film (11-17), which is a side opposite to the substrate (10), wherein a pattern having a light pickup surface is formed on a light emitting portion of the multi-layer semiconductor film (10), the light pickup surface is in a (111) plane or a plane in the vicinity of the (111) plane, and an unevenness is formed on the light pickup surface. <IMAGE>
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