METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a semiconductor device is provided to prevent an abnormal reaction between a barrier layer and a lower wiring layer by performing a thermal annealing process or forming a lower wiring layer or a barrier layer with a material including impurities before a tungsten deposition process. CONSTITUTION: A lower wiring layer is formed on an upper surface of a semiconductor substrate. An insulating layer is formed on the semiconductor substrate in order to cover the lower wiring layer. The lower wiring layer is exposed by forming a via hole. A barrier layer is formed on an inner wall of the via hole. A rapid thermal annealing process is performed on the semiconductor substrate under the predetermined temperature. An upper wiring layer is formed on the semiconductor substrate. The upper wiring layer is connected to the lower wiring layer.