| 摘要 |
PURPOSE: A method of fabricating semiconductor device with halo junction structure is provided to be capable of simplifying manufacturing processes by reducing the number of photolithography processes. CONSTITUTION: An NMOS transistor gate(104a) and a PMOS transistor gate(104b) are formed on a semiconductor substrate(100). After depositing a spacer insulating layer on the entire surface of the resultant structure, the first and second sidewall spacer(106s,216s) are sequentially formed at both sidewalls of the NMOS and PMOS transistor gate by carrying out a two-step isotropic etching process at the spacer insulating layer. At this time, an NMOS transistor junction region and a PMOS transistor junction region are sequentially formed at both sides of the NMOS and PMOS transistor gate in the semiconductor substrate by carrying out a two-step ion implantation. Preferably, the first and second photoresist pattern are simultaneously used as an etching mask and an ion implanting mask.
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