| 摘要 |
A field emission device 100, includes an emitter electrode 112, an extractor electrode 120, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier (114, 116), which is formed on the emitter electrode 112 and electrically couples with the extractor electrode 120 such that when an electric potential is placed between the emitter electrode 112 and the extractor electrode 120, a field emission of electrons is generated from an exposed surface of the semiconductor layer 116. Schottky metal 114 may be selected from conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer 116 placed on the Schottky metal is very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride. <IMAGE> |
