NAND TYPE FLASH MEMORY DEVICE

摘要

PURPOSE: A NAND type flash memory device is provided to improve the uniformity of a coupling ratio of all memory cells by increasing the width of a word line pattern neighboring to a ground selection line and a string selection line, and to reduce time for program. CONSTITUTION: A NAND type flash memory device includes a plurality of active regions(13), a ground selection line pattern(G), a string selection line pattern(S), and a plurality of word line patterns(W1-Wn). The active regions are arrayed on a semiconductor substrate. The ground selection line pattern and the string selection line pattern are arrayed in parallel on an upper portion of the active regions. The word line patterns are arrayed on the active regions between the ground selection line pattern and the string selection line pattern. The word line patterns includes the word line patterns of the first group, the word line patterns of the second group, and the word line patterns of the third group. The word line patterns of the second group is wider than the word line patterns of the third group.