| 摘要 |
A high-reliability evaluation technique is proposed which is related to semiconductor device manufacture. A photoresist formed on a wafer is subjected to exposure and development thereby to form a pair of opposed patterns ( 1, 2 ) with distance x in the photoresist, followed by measurement of distance x between the patterns ( 1, 2 ) in the photoresist. For example, the amount of variations in exposure energy is evaluated by using the measuring result. The evaluation is made by using distance x between patterns ( 1, 2 ) which are easy to change with variations in exposure energy, etc., thus improving the reliability of evaluation. |
