发明名称 Planar electron emitter device
摘要 A field emission planar electron emitter device 100 has an emitter electrode 112, an extractor electrode 120, and a planar emitter emission layer 214, electrically coupled to the emitter electrode 112 and the extractor electrode 120. The planar electron emitter 214 is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. This biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter 216a that is thicker in depth than at an interior portion 216b of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode 112 and the extractor electrode 120. The electric field draws emission electrons from the surface of the planar emitter emission layer 216 towards the extractor electrode 120 at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device 100 further includes a focusing electrode 124 electrically coupled to the planar electron emitter 216. <IMAGE>
申请公布号 EP1328000(A2) 申请公布日期 2003.07.16
申请号 EP20030250113 申请日期 2003.01.09
申请人 HEWLETT-PACKARD COMPANY 发明人 BIRECKI, HENRYK;BINH, VU THIEN
分类号 H01J1/304;G11B9/10;H01J1/308;H01J1/312;(IPC1-7):H01J1/30 主分类号 H01J1/304
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