| 摘要 |
PURPOSE: A non-volatile memory device and a matrix display panel thereof are provided to reduce the weight, improve the elasticity, simplify a fabrication process, and perform a multi-programming operation by forming an organic semiconductor on an upper portion of an active layer. CONSTITUTION: A non-volatile memory device includes an active layer which is formed by an organic semiconductor(2). The non-volatile memory device has a function of a field effect transistor. A gate insulating layer of the field effect transistor is a ferroelectric body. The ferroelectric body is formed with an organic material including a polymer. The organic semiconductor is formed between contact regions of a source(4) and a drain(3). A ferroelectric layer(5) and a gate electrode(6) are formed on thereon. An auxiliary insulating layer is formed on the organic semiconductor. The auxiliary insulating layer is formed on the ferroelectric layer.
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