| 摘要 |
PURPOSE: A method for forming a passivation layer is provided to be capable of improving reflash property in using an HDP(High Density Plasma) oxide layer as the passivation layer. CONSTITUTION: A metal interconnection(212) is formed on a semiconductor substrate(200) having a desired structure. A barrier layer(214) is formed on the entire surface of the resultant structure. An HDP oxide layer(220) as a passivation layer is deposited on the barrier layer at the atmosphere of hydrogen. A silicon nitride layer doped in nitrogen atoms is used as the barrier layer(214). The thickness of the barrier layer(214) is 500-3000Å.
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