发明名称 |
Apparatus and method for determining the reliability of integrated semiconductor circuits at high temperatures |
摘要 |
<p>Device for measuring the reliability of integrated semiconductor elements has a support substrate (1) for receipt of the integrated semiconductor element (HBE), a heating element (HE) for heating the semiconductor element and a temperature sensor (TS) for measuring its temperature. The temperature sensor is formed at least partially from an interference element of the semiconductor element itself. An Independent claim is made for a method for measuring the reliability of an integrated semiconductor circuit wherein a measurement mode is implemented and the element heated, followed by a stress mode wherein the semiconductor element is heated and stressed simultaneously and the failure point of the circuit is determined dependent on the applied temperature.</p> |
申请公布号 |
EP1279966(A3) |
申请公布日期 |
2003.07.16 |
申请号 |
EP20020014934 |
申请日期 |
2002.07.08 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ASAM, WILHELM;FAZEKAS, JOSEF;MARTIN, ANDREAS;SMEETS, DAVID;VON HAGEN, JOCHEN |
分类号 |
G01R31/28;G01R31/3173;H01L23/544;(IPC1-7):G01R31/317;G01R31/316 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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