| 摘要 |
PURPOSE: A method for forming an isolation layer and a method for fabricating a semiconductor device using the same are provided to improve a refresh characteristic according to reduction of input ion of boron, and control easily a threshold voltage by preventing the segregation of boron. CONSTITUTION: A trench having the predetermined depth is formed by etching a semiconductor substrate(31). A field stop layer(37) is formed by implanting ions of impurity into a sidewall of the trench. The first insulating layer and a diffusion barrier are sequentially formed on the semiconductor substrate including the trench. The second insulating layer is formed on the diffusion barrier in order to fill the trench. An upper surface of the semiconductor substrate is exposed by planarizing the second insulating layer. The first and the second insulating layers are formed with the oxide insulating layers, respectively. The diffusion barrier is formed with a nitride layer.
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