| 摘要 |
PURPOSE: A method for forming a capacitor is provided to be capable of improving profile of a storage node. CONSTITUTION: The first heavily doped oxide layer(214), a lightly doped oxide layer(216) and the second heavily doped oxide layer(218) are sequentially formed on a semiconductor substrate(200) having a conductive plug(210). An oxide pattern(230) is formed to expose the conductive plug by selectively etching the second heavily doped oxide layer, the lightly doped oxide layer and the first heavily doped oxide layer. A storage node(234) having an MPS(Metastable PolySilicon) layer(233) is formed on the resultant structure. A dielectric film(237) and a plate electrode(239) are sequentially formed on the storage node.
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