| 摘要 |
According to the present invention, of the resist film applied to the entire surface of the silicon substrate, the part on the electrode pattern is removed and an opening shaped like a dish in which the diameter of the upper part is larger than that of the lower part is formed, wherein the diameter of the lower part is smaller than the outer diameter of the electrode pattern. The electrode pattern exposed at the bottom of the opening is removed by the etching process. Next, the silicon substrate is tilted and a laser beam is irradiated toward the silicon substrate exposed at the bottom of the opening with water running over the surface of the resist film in air, and a hole is formed. |
