Semiconductor memory device

摘要

A semiconductor memory device comprises a plurality of sense amplifiers divided into a plurality of groups, each of the groups being a unit of a page readout operation; a sense amplifier control signal generation circuit which outputs a sense amplifier control signal for enabling the sense amplifiers of each group and disabling the sense amplifiers of each group, wherein the sense amplifier control signal enables and disables the sense amplifiers of a part of the groups at different timing from the sense amplifiers of other groups; and a plurality of memory cells connected to the sense amplifiers via data lines.