| 摘要 |
PURPOSE: A method for forming a transistor is provided to be capable of easily obtaining margins of a cell transistor. CONSTITUTION: A well(202) is formed in a semiconductor substrate(200). A shallow trench(204) is formed to define an active region by selectively etching the substrate. An isolation layer(206) is filled into the shallow trench. The top portions of the isolation layer(206) are selectively exposed. A conductive spacer(211) is then formed at both sidewalls of the exposed isolation layer. After forming a silicon nitride layer between the isolation layers, the first conductive type impurity diffusion region(216) is formed at the lower portion of the conductive spacer. After removing the residual silicon nitride layer, a gate electrode is formed on the substrate. Then, the second conductive type source/drain region is formed in the substrate.
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