发明名称 |
Fabrication method for spin valve sensor with insulating and conducting seed layers |
摘要 |
A method is described comprising forming an insulating polycrystalline seed layer in a first chamber by reactively pulsed DC magnetron sputtering, then forming an insulating amorphous-like seed layer in a second chamber by reactively pulsed DC magnetron sputtering, then forming a conducting seed layer and a ferromagnetic free layer in a third chamber by ion beam sputtering, and then forming the remainder of a spin valve sensor through the antiferromagnetic layer in a fourth chamber by DC magnetron sputtering.
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申请公布号 |
US6592725(B2) |
申请公布日期 |
2003.07.15 |
申请号 |
US20020219410 |
申请日期 |
2002.08.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LIN TSANN;MAURI DANIELE |
分类号 |
C23C14/00;C23C14/08;C23C14/56;G01R33/09;G11B5/31;G11B5/39;H01F41/30;(IPC1-7):C23C14/34;G11B5/127 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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