THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A TFT(Thin Film Transistor) and a manufacturing method thereof are provided to be capable of preventing the step coverage of a gate oxide layer from being deteriorated and restraining a hillock phenomenon. CONSTITUTION: A TFT is provided with a substrate and a two-step topology structure type gate(149). The two-step topology structure type gate includes the first metal layer(143) formed on the substrate and the second metal layer(145) formed on the first metal layer. The first metal layer is made of the first material having tensile stress characteristic. The second metal layer is made of the second material having compression stress characteristic. The width of the second metal layer is smaller than that of the first metal layer. The generation of a hillock phenomenon is prevented by the mutual coupling between the tensile stress of the first metal layer and the compression stress of the second metal layer.