发明名称 |
Method of manufacturing semiconductor optical device |
摘要 |
The present invention relates to a method of manufacturing a semiconductor optical device. The present invention discloses a method of manufacturing an optical device of a planar buried heterostructure (PBH) type by which an active layer region of a taper shape at both ends is patterned, an undoped InP layer is selectively grown in order to reduce the propagation loss and two waveguides are simultaneously formed by means of a self-aligned method, thus simplifying the process to increase repeatability and yield.
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申请公布号 |
US6593162(B1) |
申请公布日期 |
2003.07.15 |
申请号 |
US20020185137 |
申请日期 |
2002.06.27 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
PARK KYUNG HYUN;BAEK YONG SOON;KIM SUNG BOCK;OH KWANG RYONG |
分类号 |
H01S5/30;H01S5/10;H01S5/20;H01S5/227;H01S5/343;(IPC1-7):H01L21/00 |
主分类号 |
H01S5/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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